Abstract
This paper summarizes results of the epitaxial growth of Ga(AsBi) by metal organic vapor phase epitaxy (MOVPE) using all-liquid group V precursors. Ga(AsBi)/GaAs multi quantum well (MQW) samples are grown on GaAs (001) substrates at temperatures as low as 375°C and 400°C using triethylgallium (TEGa), tertiarybutylarsine (TBAs) and trimethylbismuth (TMBi) as precursors. High resolution x-ray diffraction (HR-XRD), transmission electron microscopy (TEM) as well as atomic force microscopy (AFM) measurements show that MQW structures with good crystalline quality are realized. Under specific growth conditions, the Bi droplet formation can be avoided completely. The incorporated Bi-content is limited depending on the growth temperature used. Surplus Bi segregates at the surface and incorporates into the subsequent GaAs barrier when the Bi supply is stopped. The MQW samples show room temperature photoluminescence (PL) already after growth. A redshift and a decreasing PL signal intensity with increasing Bi fraction is observed.
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