Abstract
In this paper we discuss the epitaxial growth of Ga(AsBi) on GaAs under continuous precursor gas supply by metal organic vapor phase epitaxy (MOVPE). Due to the required low growth temperatures, liquid precursors triethylgallium (TEGa), tertiarybutylarsine (TBAs) and trimethylbismuth (TMBi) were chosen. The influence of several growth parameters such as TMBi/V and V/III ratios, the applied growth temperature and growth rate on the Bi incorporation was investigated. Layers containing up to 5% Bi with good chemical homogeneity and smooth Ga(AsBi)/GaAs hetero-interfaces without metallic droplet formation were realized and beyond that incorporation of more than 7% Bi was shown. Furthermore it was found that Bi acts as surfactant during the growth, reducing the growth rate and impurity incorporation and improving the integrated photoluminescence signal by several orders of magnitude.
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