Abstract
We have grown unstrained Al0.66In0.33As0.85Sb0.15/Ga0.64In0.36As0.84Sb0.16 multiple-quantum-well structure on Fe-doped InP substrate by metalorganic vapor phase epitaxy. Double crystal X-ray diffraction, secondary ion mass spectrometry, and low-temperature photoluminescence were used to characterize the multiple-quantum-well structure.
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