Abstract
AlInAsSb and Al 0.66In 0.34As 0.85Sb 0.15/In 0.53Ga 0.47As multiple-quantum-well (MQW) structures were grown by metalorganic vapor phase epitaxy. Silane (SiH 4) and dimethylzinc (DMZn) were used as n-type and p-type dopants, respectively. The electron concentration of the AlInAsSb bulk layer increases from 5.2×10 16 to 2.8×10 17 cm −3 and the mobility decreases from 1204 to 703 cm 2/V s with the flow rate of SiH 4 increasing from 20 to 150 sccm. The hole concentration of the AlInAsSb bulk layer increases from 2.06×10 15 to 5.8×10 17 cm −3 and the mobility decreases from 284 to 120 cm 2/V s with the flow rate of DMZn increasing from 20 to 200 sccm. Double crystal X-ray diffraction, secondary ion mass spectrometry, and photoluminescence were used to characterize the MQW structures.
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