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https://doi.org/10.1049/el:19860834
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Cite Journal: Electronics Letters |  Publication Date: Nov 6, 1986 |
 Citations: 22 |
Semi-insulating Fe-doped InP layers have been grown by atmospheric-pressure MOVPE using ferrocene [Fe(C5H5)2], trimethylindium (TMI) and phosphine (PH3) as source materials. Resistivities at 294K of more than 8 × 108Ωcm with a highest value of 1.5 × 109 have been achieved.
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