MOSFET Scaling to Nanometer Regimes

Abstract

This paper presents the effect of the scaling-down of the MOSFET to nanometer regimes on the MOSFET performance. Cut-off frequency, transconductance, CMOS inverter delay and leakage tunneling current are computed. The cut-off frequency is investigated taking into consideration the gate drain and gate source overlap and the fringing capacitances. The effect of the oxide thickness scaling down on the gate tunneling current is computed. The results show that, at 5 nm channel length, the cut-off frequency can reach 150 GHz and the CMOS inverter delay can be less than 0.4 ps.