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https://doi.org/10.1049/el:20030936
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Cite Journal: Electronics Letters |  Publication Date: Oct 2, 2003 |
 Citations: 47 |
A simple technique to determine MOSFET gate-bias dependent source and drain series resistances from experimental S-parameters is presented. This technique uses the measured data of a single device. The extracted data allow the accurate modelling of the bias dependence of the output resistance of the MOSFET up to 27 GHz.
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