Abstract
In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal–oxide–semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y- and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y- and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.