Abstract
The oxide thickness in silicon MOS solar cells is comparable to the non-stoichiometric transition region associated with thermally grown thick oxides. The oxide thickness dependence of open circuit voltage below a particular thickness has been interpreted to give information regarding the physical properties of the transition layer. By using the Maxwell-Garnett relation, the complex dielectric constant of the transition region has been estimated as a function of its thickness. Our study indicates thgre is a graded interface and the width of transition layers is about 13-14 å.
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