Abstract
We have modified the electrical conductivity and the optical gap of amorphous SiOx (x≃ 1.6) by the addition of various amounts of W, Ni, and Li. The effect of the transition metal elements is quite different from the effect of Li. Comparison of the data for the Li-modified material with that for the unmodified SiOx strongly suggests that the predominant source of carriers in the latter is due to the nonbridging oxygen atoms.
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