MOS 커패시터 중화기법을 이용한 W-Band 고 이득 저잡음 증폭기 설계

Abstract

This study presents a four-stage common-source(CS) differential low-noise amplifiers at the 80 GHz band developed by using the 65-nm complementary metal–oxide–semiconductor(CMOS) process. To improve the gain of CS structures in the millimeter wave band, the Cgd capacitance between the gate and the drain is neutralized by using a cross-coupled MOS capacitor. By varying the Well bias configuration of MOS capacitor, the characteristics of the amplifier is observed, and the optimal bias condition is derived to achieve maximum gain and high stability. The implemented circuit showed a maximum gain of 28.43 dB at 83.2 GHz and a simulated noise figure of 6.89 dB. The low noise amplifier consumes 50 mW direct current(DC) power from a 1.2 V supply voltage.