Abstract
Porous silicon nanowires have shown several advantages including low reflection and high luminescence characteristics for the range of the optical spectrum. This indicates that porous silicon nanowires have a great potential to be utilized in optoelectronics and chemical sensors. In this document, silicon nanowires (SiNWs) are grown using the electroless etching technique at specific etching time and concentration of silver nitrate and hydrofluoric acid based solution. Subsequently, porous SiNWs are fabricated from the electroless etched SiNWs in an electrolytic process in ethanol and hydrofluoric acid based solutions keeping the same electrical current and etching time. Analysis determining the relationship between reflectance and length and diameter of the nanostructures is presented.
Published Version
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