Morphology in Porous Silicon Prepared from Si-Nanowires Grown By Electroless Etching

Abstract

Porous silicon nanowires (SiNWs) shown remarkable advantages due to the chemical and physical properties [1]. These properties cause special interest in optoelectronics and sensing applications [2]. Porous silicon nanowires were prepared in an electrolytic solution concentration after grown these nanostructures in an electroless etching solution [3]. Changes in the morphology of porous SiNWs may be the result of increasing the concentration of the oxidizer (C2H6O) and etching time when these nanoparticles are etched in an electrolytic solution. SiNW arrays grown by electroless etching is shown in Figure 1a. Further changes are achieved in the diameter and length when the prepared electroless SiNW arrays are etched in an anodic solution to reduce its quantum confinement to obtain porous silicon nanowires, as shown in Figure 1b. Silicon nanowires were grown by electroless etching in an etching solution concentrations of hydrofluoric Acid (HF) and silver nitrate (AgNO3) at room temperature [4]. The prepared nanowires were then etched in an electrolytic solution containing HF and ethanol to make porous Si quantum confinement structures. SEM images were obtained for morphology analysis. Figure 1