Abstract
Abstract Highly crystallized BaWO 4 films have been prepared by a galvanic cell method without impressed current on tungsten substrates at room temperature. The surface morphology, grain size and crystal phase of BaWO 4 films have been controlled effectively by adjusting ion-concentration, pH and even adding adequate surfactant. The BaWO 4 films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD). The results indicate that the films have single phase and uniform surfaces. The grain size was changed under different treatment conditions.
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