Abstract
A large number of GaN pyramid shaped crystals with the maximum size of about 3 mm have been grown by Na flux method. The morphologies of GaN crystals were observed with optical microscope and scanning electron microscope (SEM). The quality of GaN crystal was checked by X-ray powder diffraction (XRD) and photoluminescence (PL) spectra. The SEM photographs show most of the crystals were hexagonal pyramidal, and there were a considerable number of hexagonal bipyramidal GaN crystals with twin plane. The relationships between GaN crystal morphology and the growth rate were also discussed.
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