Abstract
The Na flux method has a high potential of synthesizing high quality GaN crystals, although it has been difficult to grow GaN crystals of large size with a moderate growth rate. In the article by Mori et al. (p. 1283), carbon doping into the solution and forced induction of the solution flow are shown to be effective to control the nucleation and solution conditions in the Na flux method. The authors show that it is possible to grow 2′′-diameter GaN crystals with high quality and high uniformity. The absorption edge of the GaN crystal at 372 nm was observed without any detectable absorption peaks. GaN crystals grown by the Na flux method showed a relatively low resistivity below 1 W cm without any intentional doping. The carrier mobility in the unintentionally doped sample was over 900 cm2/V cm. The resistivity of the GaN crystal could be reduced by Ge doping down to 0.016 W cm and increased by Zn doping up to 108 W cm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
