Abstract
Morphological modifications during selective epitaxy of InP by hybride vapour phase epitaxy around reactive ion etched stripe mesas as in the case of edge emitting lasers were studied by growth of alternating layers of InP and InP:S. The growth profiles were analysed and compared with the selective growth behaviour around reactive ion etched cylindrical and parallelepiped mesas as in the vertical cavity surface emitting lasers. The very initial growth pattern is found to be responsible for the emerging features. The growth along the [110] direction is faster than that along its orthogonal [ 1 10] direction, providing a better planarization along the former. Earlier planarization however can cause mask encroachment, especially in the case of cylindrical mesas, but can be suppressed by using wet etched mesas.
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