Abstract
We show that selective growth of InP can be achieved by using solid source epitaxy with an additional hydrogen rf-plasma excited in the reaction chamber. By optimizing the process parameters such as substrate temperature, plasma power and phosphorus over-pressure, smooth InP layers with geometry independent growth rates were grown on SiN-patterned InP substrates without growth on the mask. Further investigations showed that a physical desorption process is the mechanism for selective area growth in this plasma assisted epitaxy method.
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