Abstract
Selective growth of InP by low pressure metalorganic vapor phase epitaxy (LP MOVPE) on (100) InP substrates was studied using SiO 2 masks. The role of the mask geometry on the shape of the selectively grown structures was investigated. The rate and the cross section of the patterns depends on deposition temperature, V/III ratio, growth velocity and total pressure. The experimental findings can be explained by a simple model assuming orientation dependent growth rates and surface migration. Hall data (μ 77 = 65,000 cm 2/V·s) show the excellent material quality of the selectivity grown structures.
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