Abstract
Thin dielectric Al2O3 and SrO films obtained by thermal evaporation in vacuum, as well as Si3N4 and SiO2 films obtained by RF magnetron sputtering, were studied by atomic force microscopy. The metric and fractal parameters of dielectric layers are estimated using the Gwyddion graphical program for analyzing data from scanning probe microscopy. It has been established that the maximum values of the fractal dimension are characteristic of aluminum oxide films with a thickness of 0.5 μm, while the smallest root-mean-square roughness is characteristic of strontium oxide films. The prospects for using the analyzed dielectric films as insulating layer of sensitive elements of strain gauge pressure sensors with a conductive elastic element are demonstrated.
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