Monte Carlo Simulation of THz Radiation Detection in GaN MOSFET n+nn+ Channel with Uncentered Gate in n-region

Abstract

Electron transport and drain current noise in the wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. A proper design of GaN MOSFET n+nn+ channel with uncentered gate in n-region to reach the maximum detection sensitivity is proposed. It is shown that the main role in formation of longitudinal transport asymmetry and THz radiation detection is played by optical phonon emission process. It is found that the detection current at 300 K is maximal in frequency range from 0.5 to 7 THz. At higher frequenciea the detection current rapidly decreases due to the inertia of electron motion.