Drain current noise in GaN MOSFETs at THz generation conditions

Abstract

Electron transport and drain current noise in wurtzite GaN MOSFETs have been studied by Monte Carlo particle simulations which simultaneously solve the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at positive gate voltages giving excess electron concentration in the n-region of the channel the drain current, self-oscillations in the THz frequency range up to 5 THz are possible. These self-oscillations are driven by electron plasma instability. Moreover, a step-like drain current dependence on drain bias is demonstrated.