Monte Carlo simulation of THz noise and generation under electron cooling in wurtzite GaN MOSFET at room temperature

Abstract

Electron transport and drain current noise in optimized for THz generation wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation which simultaneously solve the Boltzmann transport and pseudo-2D Poisson equations. The drain current and average electron energy under the gate at 300 K is calculated as a function of drain bias. The electron cooling when average electron energy under the gate is less than thermal electron energy is demonstrated. The step like current voltage relation due to the optical phonon emission is shown. It is found that THz generation in frequency range from 6 to 10 THz is possible at room temperature.