Monte Carlo simulation of the SRAM single event upset

Abstract

The process of deposited energy in sensitive volumes in a static random access memory (SRAM) chip induced by 10—20MeV neutrons is simulated using the Monte Carlo method. In the simulation, the physical parameters related to the single event upset (SEU) of the SRAM chip are calculated. The results provide detailed statistical data for the SEU process induced by 10—20MeV incident neutrons, and reference information for the deface reinforcement of the SRAM chip.