Abstract
A Monte Carlo program was written following the method described by Biersack and Haggmark, to simulate ion implantation profiles in multilayer targets. Range distributions of recoiled silicon resulting from implantations of silicon and selenium ions through films of Si 3N 4 on GaAs are obtained. The recoil distributions in the Si 3N 4 GaAs system are characterized by exponential regions with decay lengths proportional to the maximum energy transfer from incident to recoil atom, γE O, nearly independent of film thickness and of the primary ion. These results are similar to those obtained for the SiO 2 Si system by Christel et al. using a Boltzmann transport equation approach.
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