CHAPTER 3 - Application of the Boltzmann Transport Equation to Ion Implantation in Semiconductors and Multilayer Targets

Abstract

This chapter presents the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets. In the chapter, the Boltzmann transport equation is applied to the following ion implantation situations: (1) the calculation of range and recoil distributions in multilayer targets; and (2) calculations of damage distributions and stoichiometry disturbances in semiconductors. The Boltzmann transport equation provides a very comprehensive treatment of the general ion implantation problem. The transport equation predicts the spatial distribution of recoils and, thus, provides the theoretical information needed to determine the fractional atomic displacement necessary for amorphization of silicon, and the degree of stoichiometric imbalance that is produced when energetic ions are incident on a target having more than one type of host atom. The Boltzmann transport equation is used increasingly for ion implantation problems, in compound semiconductors, and for a variety of silicon processing applications, particularly where thin surface coatings are present on the sample surface.