Abstract
This book presents papers on the ion implantation of semiconductor materials. Topics considered include beam processing, amorphization and crystallization, the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets, thermal spike concepts, ion-bombardment-induced composition changes in alloys and compounds, ion beam and laser mixing, high-dose implantation, silicon technology, gallium arsenide technology, and contacts and interconnections in semiconductors.
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