Abstract
Range distributions of recoiled oxygen in silicon resulting from implantations of B, P, and As through films of SiO 2 on silicon are calculated by step-wise numerical integration of the Boltzmann transport equation. Using a nuclear stopping cross section proposed by Wilson, Haggmark and Biersack in place of the more standard Thomas-Fermi cross section, improved agreement with available experimental data is obtained. The recoil distributions are found to be characterized by exponential regions with spatial decay lengths proportional to the maximum energy transfer from incident to recoil atom γE o , this length being nearly independent of primary ion and film thickness. Total recoil flux calculations and a silicon recoil distribution resulting from a 400 keV Se implant through Si 3N 4 on GaAs are also found to agree well with experimental results. The device implications of these calculations are of considerable importance and will be discussed.
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