Abstract
The Monte Carlo program MARLOWE is used to simulate ion implantation in semiconductors, i.e., boron and phosphorus implanted into crystalline silicon. Unlike most programs of its kind which require amorphous targets, MARLOWE is able to simulate ion collisions in crystalline targets. It thus provides a more satisfactory treatment of channeling and damage cascades. Simulations are performed under varying conditions and the results are compared with experiment. In addition, the effects of various parameters (beam divergence, lattice temperature, etc.) are investigated. The adequacy of the theories used in the program, in particular the treatment of inelastic losses, is evaluated, and recommendations for further development are made. Post‐processors written for the program are described.
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