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Abstract
In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the average velocity in the channel obtained from Monte Carlo (MC) simulation. To illustrate our approach we compare enhanced DD and MC simulation results for a pseudomorphic HEMTs with 0.12 μm channel length, which are in good agreement. The usefulness of the described methodology is illustrated in a simulation example of self aligned gamma gate pseudomorphic HEMTs. The effect of the gamma gate shape and the self aligned contacts on the overall device performance has been investigated.
Highlights
Commercial device simulators like MEDICI [1] and BLAZE [2] are flexible, fast and work in a user friendly environment
In this paper we describe a methodology for using Monte Carlo (MC) calibrated drift diffusion (DD) simulation with enhanced channel velocity in the design and optimisation of short channel heterojunction FETs (HFETs) including HEMTs and strained Si channel SiGe MODFETs
The enhanced DD approach is based on the observation from MC simulations that in many short channel (0.1-0.2 tm gate) HFETs the velocity overshoot extends along the whole high field channel region
Summary
Commercial device simulators like MEDICI [1] and BLAZE [2] are flexible, fast and work in a user friendly environment. In this paper we describe a methodology for using MC calibrated DD simulation with enhanced channel velocity in the design and optimisation of short channel HFETs including HEMTs and strained Si channel SiGe MODFETs. The DD simulations are calibrated with respect to our finite element Monte Carlo simulator H2F [5]. In the drain region, where most of the particle in the MC simulation are in the L-valley, the DD simulation overestimates the velocity and underestimates the drain resistance This does not affect seriously the simulated rf performance since the drain resistance has usually a weak influence on the measured and extracted s-parameters
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