Abstract

The planar waveguide has been fabricated in the Yb3+-doped silicate glass by 4.0 MeV C2+ ion implantation at a dose of 2×1014 ions/cm2. The guided modes are measured using a model 2010 prism coupler at 633 nm. The near-field profiles of the planar waveguide are obtained with an end-face coupling system. The refractive index profile of the waveguide is reconstructed by the intensity calculation method, which shows a typical “enhanced well + barrier” distribution. The SRIM'2006 code is carried out to simulate the energy loss during the implantation in order to obtain a better understanding of the waveguide formation. After post-implantation treatment at 260 °C for 1 h, the waveguide possesses a propagation loss of ∼1.42 dB/cm. The acceptable guiding properties suggest that further waveguide lasers may be realized on the C-implanted Yb3+-doped silicate glass waveguides.

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