Abstract
An AlGaAs/GaAs nan heterojunction bipolar transistor (HBT) laser driver circuit and a pseudomorphic InGaAs/GaAs/AlGaAs graded index single-quantum-well (SQW) laser have been laterally integrated to maintain surface planarity using selective organometallic vapor-phase epitaxy (OMVPE) regrowth of the HBT. The self-aligned HBTs exhibit a DC current gain of 30 and an f/sub t/ (f/sub max/) of 45(60) GHz. The 980-nm lasers exhibit room-temperature threshold current densities as low as 420
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