Monolithic three-dimensional tunnel FET–nanoelectromechanical hybrid reconfigurable logic circuits

Abstract

Monolithic three-dimensional (M3D) reconfigurable logic (RL) circuits of tunnel field-effect transistors (TFETs)–nanoelectromechanical (NEM) memory switches have been proposed, simulated and demonstrated in order to overcome the limitations of CMOS-only RL circuits. A TFET is considered as one of the most promising extremely-low-power logic devices thanks to its abrupt on–off transition as well as low off-current (Ioff) and a NEM memory switch is a good solution to signal path routing thanks to its nonvolatile storage of data signal paths and stable rail-to-rail voltage swing. In our proposed RL circuits, NEM memory switch routing parts are integrated over complementary TFET logic circuits by using conventional CMOS backend process.