Scaling Trends of Monolithic 3-D Complementary Metal–Oxide–Semiconductor Nanoelectromechanical Reconfigurable Logic Circuits

Abstract

The scaling trends of monolithic 3-D (M3-D) complementary metal-oxide-semiconductor (CMOS) nanoelectromechanical (NEM) reconfigurable logic (RL) circuits are compared with CMOS-only circuits for the first time. It is confirmed that M3-D CMOS-NEM RL circuits are superior to CMOS-only circuits in terms of propagation delay, power consumption, and power-delay product (PDP) because of the low resistance and full signal swing of NEM memory switches that not only affect the current switch block but also the following block. Because the performance, power, and energy gains of the CMOS-NEM RL circuits over CMOS-only circuits increase as the technology node improves, M3-D CMOS-NEM RL circuits can be considered as one of the most promising candidates for high-density, high-performance, and low-power RL circuits.