Abstract
Semiconductor Superlattices The picture shows a monolithic power converter, fabricated in a lateral AlGaN/GaN-on-Si process on an improved AlN/GaN super-lattice buffer epitaxy. The super-lattice reduces vertical leakage and back-gating effects compared to step-graded buffers. This improved integration technology allows 98.8% efficient dc-dc conversion on a single chip. More details can be found in article number 2000404 by Stefan Moench and co-workers.
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