Momentum selectivity and anisotropy effects in the nitrogenK-edge resonant inelastic x-ray scattering from GaN

Abstract

High-resolution soft x-ray emission and absorption spectra near the N $K$-edge of wurtzite GaN are presented. The experimental data are interpreted in terms of full-potential electronic structure calculations. The absorption spectra, compared with calculations including core hole screening, indicate partial core hole screening in the absorption process. The resonantly excited x-ray emission spectra show pronounced dispersion of spectral structures, which is attributed to effects of momentum conservation in the resonant inelastic x-ray scattering (RIXS) process. In development of GaN based optoelectronics, momentum selectivity in RIXS can be utilized to control development of band structure in GaN nanostructures.