Abstract
This paper reviews the MOMBE growth of InAsP MQWs and their application to 1.3 μm wavelength laser diodes, which is an excellent example for showing the advantage of using MOMBE to grow strained MQWs. The combination of strain compensation with low-temperature growth increases the critical thickness more than 1000 Å and makes it possible to grow MQW structures with 25 wells. Characterizations of the misfit dislocations in the strain-relaxed MQWs and the influence of the dislocations on the threshold currents of the lasers are presented. The maximum operating temperature, T max, of the laser diodes increases with increasing well number and it reaches its highest, 155°C, for lasers with 15 wells. The buried-heterostructure MQW lasers have a high output power of 37 mW at 90°C and show no long-term reliability problems.
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