Abstract
High quality α‐ZnxSr1−xS with a single‐phase rocksalt structure can be epitaxially deposited on (001) MgO substrate using α‐MnS buffer layer under appropriate growth conditions. We observed efficient infrared‐stimulated luminescence (ISL) with a peak at ∼ 620 nm when visible‐light‐irradiated α‐Zn0.05Sr0.95S:Eu,Sm thin films were stimulated with IR light. The observed ISL intensity is stronger in Zn0.05Sr0.95S:Eu,Sm as compared to SrS:Eu,Sm. We propose that the ISL emission intensity in SrS:Eu, Sm is enhanced not only by the inclusion of Zn but also due to the growth of film at high substrate temperature.
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