Abstract
We report the growth and characterization of Zn 0.05Sr 0.95S codoped with europium and samarium ions. The material was grown on α-MnS (rocksalt) buffer layer on (0 0 1)MgO substrate, using solid-source molecular-beam epitaxy technique. Characterization by reflection high-energy electron diffraction, atomic force microscopy, Rutherford back-scattering spectrometry and X-ray diffraction results provide clear evidence that a good stoichiometric film with crystalline single-phase rocksalt α-Zn 0.05Sr 0.95S can be obtained at high substrate temperature without sulfur deficiency. Intense infrared-stimulated luminescence (ISL) with a peak at 612 nm is observed in α-Zn 0.05Sr 0.95S:Eu, Sm which is stimulated with infrared light after irradiation with visible light. The ISL result shows that the α-Zn 0.05Sr 0.95S:Eu and Sm can be developed for erasable and rewritable optical memory.
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