Abstract
The growth and characterization of aBaZrO3 buffer layer for controlling the in-plane orientation ofYBa2Cu3O7−δ films grown on MgO substrates is described.BaZrO3 bufferlayers and YBa2Cu3O7−δ films are grown by pulsed laser deposition.45° grain boundariestypically exist in YBa2Cu3O7−δ films grown on MgO(001) substrates; these are fatal defectsfor microwave device applications and are eliminated using theBaZrO3 buffer layer. The preferred orientation and in-plane orientation withrespect to the MgO substrates are estimated for MgO lattice-matchedBaZrO3 buffer layers grownon MgO substrates. YBa2Cu3O7−δ films grown at an optimum growth temperature of710 °C on BaZrO3 buffer layers on MgO(001) substrates show a lower surface resistance(RS) than those on MgO(001)substrates without BaZrO3 buffer layers.
Published Version
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