Abstract
A concept for future electronic material is introduced which contains silicon substrates, conventional integrated circuits and heterostructure device areas. Molecular beam epitaxy of silicon (Si-MBE) is proposed for the realization of this heterointegration concept. The advantages of Si-MBE are listed and examples of typical device types are given. The examples include 100 GHz discrete two-terminal devices (IMPATT), silicon millimetre-wave integrated circuits (SIMMWIC) and SiGe base heterojunction bipolar transistors (HBT). The preparation of ultrathin Si/Ge strained layer superlattices (SLS), their prospects for optoelectronic applications and the observation of SLS-induced photoluminescence are discussed.
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