Abstract
A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (/spl beta//spl middot/Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1/spl times/4 /spl mu/m/sup 2/ emitter, typical value of /spl beta//spl middot/Va is 200,000 V (/spl beta/=2,000 and Va=100 V) at the collector current of 0.9 mA.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
