Abstract
FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of the magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous reports of epitaxial growth of single crystalline FeSn. Here, we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO3 (111) substrates. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio ρxx(300K)/ρxx(2K)=24 and antiferromagnetic ordering at TN=353 K. These developments open a pathway to manipulate the Dirac fermions in FeSn by both magnetic interactions and the electronic field effect for use in antiferromagnetic spintronics devices.
Highlights
There have been reports of polycrystalline or granular FexSny films for characterization and application of their magnetic properties, isolating a single-phase FeSn film has not been achieved yet.12–14 To study the physics of the magnetic kagome lattice in FeSn and for its electronics applications, it is desirable to realize the material in a single-phase thin film form so that it can be processed into device structures and its physical properties can be tuned electrostatically
While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous reports of epitaxial growth of single crystalline FeSn
We report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO3 (111) substrates
Summary
There have been reports of polycrystalline or granular FexSny films for characterization and application of their magnetic properties, isolating a single-phase FeSn film has not been achieved yet.12–14 To study the physics of the magnetic kagome lattice in FeSn and for its electronics applications, it is desirable to realize the material in a single-phase thin film form so that it can be processed into device structures and its physical properties can be tuned electrostatically. ABSTRACT FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio qxxð300KÞ=qxxð2KÞ 1⁄4 24 and antiferromagnetic ordering at TN 1⁄4 353 K.
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