Epitaxial integration and properties of SrRuO3 on silicon

Zhe Wang,Gabriela C Correa,Han Jin Lim,David A Muller,Darrell G Schlom,Hari P Nair,Eun Sun Kim,Kiyoung Lee,Jaewoo Jeong,Chang Seung Lee,Ariel Seidner H

doi:10.1063/1.5041940

Zhe Wang, Gabriela C Correa + Show 9 more

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https://doi.org/10.1063/1.5041940

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Abstract

We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01°, a resistivity at room temperature of 250 μΩ cm, a residual resistivity ratio (ρ300 Kρ4 K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of ∼160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon.

Highlights

SrRuO3 is one of the most widely used oxide electrode materials in epitaxial oxide heterostructures and related devices.[1]
Polycrystalline SrRuO3 precludes the epitaxial integration of functional oxide thin films on top of the SrRuO3 electrode and with it a loss of the optimal properties that epitaxial heterostructures often provide for complex oxide integration
To achieve epitaxial SrRuO3 on silicon, various buffer layers that can be epitaxially grown on silicon have been introduced, including yttria-stabilized zirconia (YSZ),[9,26] SrO,[27,28] SrTiO3,29,30 and SrTiO3 on TiN.[31]

Summary

Introduction

SrRuO3 is one of the most widely used oxide electrode materials in epitaxial oxide heterostructures and related devices.[1]. In the study of Park et al.,[41] the SrTiO3 buffer layer on silicon was grown by MBE while the SrRuO3 film was subsequently deposited by off-axis sputtering. There is no report of MBE-grown epitaxial SrRuO3 films on silicon SrRuO3 films of very high quality can be grown on single-crystal oxide substrates by MBE.[38,42]

Results

Conclusion