Abstract
In this paper, we describe the characteristics of Al-doped n-type Zn1-xMgxO alloy films grown on a-plane sapphire substrates by molecular beam epitaxy, and the application of the films in modulation-doped ZnO/Zn1-xMgxO quantum wells (QWs). The results of Hall measurement for the Al-doped Zn0.8Mg0.2O alloy films revealed an excellent doping efficiency that the resistivity at 300 K decreased from 3.8×10-1 Ω·cm at 1.0×1018 cm-3 to 8.0×10-4 Ω·cm at 3.5×1020 cm-3. Although Al doping at higher than 1020 cm-3 resulted in a reduction in intensity and a broadening of the peak width of near-band-edge emission in cathodoluminescence with an increase in absorption-edge energy induced by the Burstein–Moss shift in optical transmittance, highly c-axis-oriented films without rotational domains were obtained in a wide range of doping levels. Such a successful doping was also confirmed for Zn1-xMgxO alloy films with a Mg content as high as 0.4. By applying Al doping to modulation-doped ZnO/Zn0.6Mg0.4O QWs, the sheet carrier density of the ZnO well was found to be proportional to the doping level in the Zn0.6Mg0.4O barrier layer.
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