Abstract
The thin films of W-doped VO2were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO2thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2is more than that of un-doped VO2, but more smoother.
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