Abstract
AbstractThe well‐developed high‐k technologies ease the integration complexity for HfO2‐based ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes. Sputtered HfxZr(1‐x)O2 (HZO) FEs have proven their thermal compatibility in back‐end‐of‐line (BEOL) integration processes with high remanent polarization (Pr) and a high cycling endurance. With the help of a tungsten oxide (WOx) bottom electrode, the sputtered HZO's FE properties are further advanced in this work. WOx is used to tune the oxygen content in the HZO film, providing an FE performance with a maximum 2Pr of 46 µC cm−2 and an endurance of 108 cycles. Based on this, sputtered HZO can compete with the atomic layer deposited HZO in the BEOL processes. In addition, WOx bottom electrodes enhance the FE capacitor behavior in a broad processing window, which relaxes the manufacturing restrictions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
