Abstract
Bismuth titanate (Bi 4Ti 3O 12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO 3/SiO 2/Si (1 0 0) (LNO), RuO 2/SiO 2/Si (1 0 0) (RuO 2) and Pt/Ti/SiO 2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 °C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d 33, regardless of bottom electrode is around (∼40 pm/V), those over RuO 2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 μC/cm 2), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices.
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