Abstract
Lanthanum-doped bismuth titanate thin films (Bi 3.25La 0.75Ti 3O 12 – BLT) were prepared by the polymeric precursor method and crystallized in the microwave and conventional furnaces. The obtained films are polycrystalline in nature and its ferroelectric properties were determined with remanent polarization P r and a coercive field E c of 3.9 μC cm −2 and 70 kV cm −1 for the film annealed in the microwave furnace and 20 μC cm −2 and 52 kV cm −1 for the film annealed in conventional furnace, respectively. Better retention characteristics were observed in the films annealed in conventional furnace, indicating that our films can be a promise material for use in the future FeRAMS memories.
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