Modulation of interfacial properties for low voltage-driven organic thin-film transistors

Abstract

Organic thin-film transistor (OTFT) devices with polyimide (PI) layers of various solid contents were fabricated. In OTFT devices, the factor of interface between modification and active layers exhibits profound correlation with electrical stability of devices. To improve the performance of stability of OTFTs during long-term operation, effective interface engineering needs to be utilized. Herein, this study demonstrated the relevance about interface properties and microstructures of N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C 13 H 27 ) grown the PI layers of various solid content. Moreover, the microstructure of PTCDI-C 13 H 27 affects the trap state in the channel, leading to the enhancement of electrical stability of the devices. Consequently, we further adopted an appropriate solid content of PI with smooth surface and lower trap state to fabricate low voltage-driven organic devices.